FORMING METHOD FOR A METAL CONTACT USING A DOUBLE PATTERNING TECHNOLOGY FOR MINIMIZING A STRING OVERHEAD

摘要

PURPOSE: A forming method for a metal contact using DPT(double patterning technology) is provided to simplify a metal contact forming process of a semiconductor device by forming a metal contact in a peri region with a metal contact in a cell region together.;CONSTITUTION: A first insulation layer and a first mask layer are successively formed on a target layer. A first opening which exposes the first insulation layer and a first mask pattern with a first hole which exposes the first insulation layer to a peri region are formed by etching the first mask layer. A line shaped first sacrificial layer pattern is formed on the first mask pattern of a cell region and the exposed first insulation layer using a DPT(double patterning technology) process. A contact hole exposing the target layer is formed by etching the first insulation layer. A metal contact(190) is formed by filling the contact hole with the metal material.;COPYRIGHT KIPO 2013