The present invention provides a barrier chamber for an electrostatic chuck in a plasma etching process. The barrier seals include a plurality of sealing portions for shielding the plasma gas from the connection layer of the electrostatic chuck. The groove of the electrostatic chuck can be completely filled with the barrier chamber. Even if one of the plurality of sealing portions is destroyed by the plasma gas during plasma etching, the barrier chamber still effectively prevents the leakage of the electrostatic chuck. The barrier chamber provides a buffer period for the engineer to replace the damaged barrier seal before the leak occurs. The risk of leakage due to sudden destruction of the barrier seal is reduced. In addition, the barrier seals facilitate the stability and safety of the plasma etching process. The profit of the product manufactured by the electrostatic chuck can be improved.
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