- SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES

摘要

this invention is a metal - containing layer of the title semiconductor device (Cu) into the deposited metal to provide a solution.in this work, the state, the method is the water surface to form a dielectric layer and a metal surface containing the planar plate with plate provided with the plane of the plate, to remove residual water from the surface of the dielectric layer, and the metal - and metal surface. the lamp body is a steam containing gas by coating on the metal surface of the metal containing cap layer have a choice - to increase adhesion to the stage.the water removal step is to include a plane model with the hydrophobic effect for containing reaction gas furnace process, the surface of the plate with the exposure to the gas etc..