Manufacturing method of AFM cantilever and the AFM cantilever

摘要

A first step of forming a first upper protective film and a first lower protective film on the upper part of the second silicon layer and the lower part of the first silicon layer of the SOI substrate in which the first silicon layer, the insulating film and the second silicon layer are sequentially laminated, A second step of forming a first pattern for adjusting the thickness of the cantilever arm on the first upper protective film, a third step of forming a first etching region in the second silicon layer by the thickness of the cantilever arm in the first pattern, Forming a second pattern for forming an upper tilt of the probe on the first upper protective film on which the first pattern is formed; forming a second pattern on the upper surface of the insulating film, The cantilever arm region is formed in the second pattern region by removing the second silicon layer by the thickness of the cantilever arm in the second pattern until the cantilever arm region is exposed, Forming a second upper protective film and a second lower protective film in the entire upper region of the second silicon layer and in the entire lower region of the first silicon layer by removing the first upper protective film and the first lower protective film, Forming a third pattern for forming a lower inclination of the probe on the second lower protective film; and forming a first pattern on the first silicon layer by partially removing the first silicon layer in the third pattern, Forming a second pattern on the second lower protective film by patterning the first pattern and the second pattern on the second lower protective film; Removing the first silicon layer with the third pattern and the fourth pattern until the lower surface of the insulating layer is exposed as a reference to leave only a part of the first silicon layer while forming the cantilever support; , remind Forming a third etch region by removing the insulating film exposed in step 10 and removing the second silicon layer along with the first silicon layer so as to have a probe bottom inclination by using the third etch area, And removing the exposed insulating layer, the second upper protective layer, and the second lower protective layer when a portion of the first silicon layer is removed. The method of claim 1, And a cantilever of an atomic force microscope manufactured by the method. Accordingly, it is possible to easily adjust the inclination of the probe, and the probe can be formed to be inclined outward with respect to the tip of the cantilever arm at an adjusted angle so that the position of the end of the probe can be visually confirmed There is an advantage that acquisition of sample information is possible.