Bismuth telluride nanowires through annealing process and Method of development for the enhancement of thermoelectric efficiency of the same

摘要

The present invention relates to a bismuth telluride thermoelectric nanowire and a method for improving the thermoelectric efficiency thereof, and relates to a bismuth telluride thermoelectric nanowire having a sebeck coefficient through heat treatment in an optimized temperature range, And improvement of the crystal structure of the nanowire structure can be expected. As a result, it is expected that the thermoelectric efficiency (performance efficiency) of the thermoelectric module finally formed with the nanowire structure can be improved.