IGBT Automatic Gate Modulation Driven Device and Method for Parallel-Connected IGBT

摘要

The present invention relates to an automatic gate modulation drive device and method for parallel-connected insulated gate bipolar transistor (IGBT), capable of synchronizing ON and OFF points of a plurality of IGBTs connected in parallel by using a voltage value output from a plurality of comparators. The automatic gate modulation drive method according to one aspect of the present invention includes: a first step of applying a gate voltage through a control unit; a second step of transferring the applied gate voltage to a plurality of IGBTs connected in parallel via a plurality of gate drive units (GDUs); a third step of comparing a transfer gate voltage delivered to each of the plurality of IGBTs with a predetermined threshold voltage by a plurality of comparators connected to the plurality of IGBTs and outputting a comparison value of High or Low; and a fourth step of allowing the control unit to synchronize ON and OFF points of the plurality of IGBTs connected in parallel by using the comparison value received from the plurality of comparators.