FILM-FORMING MATERIAL GROUP IV METAL OXIDE FILM AND VINYLENE DIAMIDE COMPLEX

摘要

The present invention relates to a method for manufacturing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film by applying a film-forming material dissolved in an organic solvent to the substrate surface and subjecting the substrate surface to a heat treatment, an ultraviolet ray irradiation treatment, or both of the treatments, Structure with an oxidizing agent such as oxygen gas, air, ozone, water, hydrogen peroxide, and the like.;