MRAM Method for Screening Defective Cells of Magnetic Random Access Memory

摘要

A method for screening a defective cell in an MRAM is disclosed. The method for screening a defective cell in an MRAM according to an embodiment of the present invention includes the steps of: applying a predetermined percentage of a voltage to a breakdown voltage in the MRAM as a start voltage; ramping to a constant voltage by a ramped voltage stress (RVS) method including a ramping speed of 1 mV/s or less; and screening the defective cell in the MRAM using the ramped voltage stress (RVS) method including the ramping speed of 1 mV/s or less ramped up to the constant voltage. Accordingly, the present invention can improve the accuracy of screening while reducing a screening time.