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CZTS A preparation method of solar cell using ZnS buffer layer

机译:CZTS一种使用ZnS缓冲层的太阳能电池的制备方法

摘要

The present invention relates to a method of manufacturing a CZTS thin film solar cell in which a zinc sulfide buffer layer is applied to a back electrode, more specifically, a zinc sulfide buffer layer is introduced between a back electrode and a metal precursor layer to form a light absorption layer, The present invention relates to a thin film solar cell having improved light conversion efficiency and cell characteristics through interface control of a thin film solar cell and a method of manufacturing the same. The method of manufacturing a thin film solar cell according to the present invention can form a zinc sulfide buffer layer between a back electrode and a metal precursor layer to reduce a void generated at an interface, thereby providing a more uniform and dense thin film, (Cu, Zn, Sn) and Group VI elements (Se, S) from being diffused into the molybdenum back electrode by improving the electrical bonding between the light absorbing layer and the rear electrode.
机译:CZTS薄膜太阳能电池的制造方法技术领域本发明涉及一种CZTS薄膜太阳能电池的制造方法,其中,在背面电极上涂布有硫化锌缓冲层,更具体地说,在背面电极与金属前驱体层之间导入了硫化锌缓冲层而形成。薄膜太阳能电池及其制造方法技术领域本发明涉及一种通过薄膜太阳能电池的界面控制而具有提高的光转换效率和电池特性的薄膜太阳能电池及其制造方法。根据本发明的薄膜太阳能电池的制造方法可以在背面电极和金属前体层之间形成硫化锌缓冲层,以减少在界面处产生的空隙,从而提供更均匀且致密的薄膜。通过改善光吸收层和背面电极之间的电键,Cu,Zn,Sn)和第VI组元素(Se,S)不会扩散到钼背面电极中。

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