首页> 外国专利> MIT Method for breaking power at high temperature and high current and being automatically recoverable based on Metal-Insulator Transition and switch for using the same

MIT Method for breaking power at high temperature and high current and being automatically recoverable based on Metal-Insulator Transition and switch for using the same

机译:麻省理工学院基于金属-绝缘体过渡的高温高电流断电自动恢复方法及使用该方法的开关

摘要

The present invention is based on the MIT technology to protect the system by blocking the overcurrent when the overcurrent flows, and it is also possible to return to the automatic system based on the MIT technology which allows the normal current to flow automatically to the system when the overcurrent returns to the normal current A high temperature and high current blocking method and a switch using such a method are provided by comparing the magnitude of the first threshold voltage (V th1 ) with the magnitude of the first FET voltage, which is the voltage between the gate (G) and the source (S) If the first FET voltage is less than the first threshold voltage V th1 , the first FET is turned off. If the first FET voltage is greater than the first threshold voltage V th1 , The second FET voltage is divided by the first FET and the second reference resistor R ref2 to calculate the second FET voltage to be input to the second FET, and the magnitude of the second FET voltage and the second threshold voltage comparing the amount of (V th2) and the second voltage of the second FET being Is greater than the voltage (V th2) and determines the second FET in the on (on) state and the second characteristic to determine a when the FET voltage is less than the second threshold voltage (V th2) off the second FET (off) .
机译:本发明基于MIT技术以通过在过电流流过时阻止过电流来保护系统,并且还可以返回基于MIT技术的自动系统,该技术允许正常电流在过流时自动流向系统。通过将第一阈值电压(V th1 )的大小与第一阈值电压(V th1 )的大小进行比较,提供了高温高电流阻断方法和使用该方法的开关。 FET电压,即栅极(G)和源极(S)之间的电压。如果第一FET电压小于第一阈值电压V th1 ,则第一FET截止。如果第一FET电压大于第一阈值电压V th1 ,则将第二FET电压除以第一FET和第二参考电阻R ref2 ,以计算第二将要输入到第二FET的FET电压,并且将第二FET的(V th2)的量与第二FET的第二电压进行比较的第二FET电压的幅度和第二阈值电压大于电压(V th2),确定第二FET处于导通(on)状态,并确定第二特性,以确定FET电压何时小于第二阈值电压(V th2) 关闭第二个FET(关闭)。

著录项

  • 公开/公告号KR101907604B1

    专利类型

  • 公开/公告日2018-10-12

    原文格式PDF

  • 申请/专利权人 주식회사 모브릭;

    申请/专利号KR20160092085

  • 发明设计人 이동채;김봉준;박종찬;

    申请日2016-07-20

  • 分类号H02H5/04;H01H83/20;H01H9/54;H02H3/08;

  • 国家 KR

  • 入库时间 2022-08-21 12:37:01

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