A method is provided for performing a self-test on a memory device in a test mode, where the memory device includes a universal flash storage (UFS) link layer and a UFS physical layer having a transmitting unit and a receiving unit. The method includes generating a first signal; sending the first signal from a test unit through the UFS link layer to the transmitting unit in the UFS physical layer to be transmitted to the receiving unit; receiving a second signal at the test unit from the receiving unit in the UFS physical layer through the UFS link layer, the second signal being the first signal received by the receiving unit; and testing an operation performed by at least one of the UFS physical layer and the UFS link layer based on the first signal and the second signal.
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