Durable metal film deposition to the mask repair

摘要

A method for repairing a wafer (100), said method comprising the steps of:- Positioning of the wafer (100) in a repair chamber (400), which a repair tool (412) comprises;- Supplying a first gas (404) to the repair chamber (400), wherein the first gas (404) a repair material to repair a defect on the wafer (100) comprises;- Supplying a second gas (408) to the repair chamber (400), wherein the second gas (408) comprises a polar gas and the separation of the repair material, at a defect site on the wafer (100), the defect in the absence of a desired structural material is at the defect;- Activation of the repair tool (412), so that the repair tool (412) with the first gas (404) and the second gas (408) interacts, in order to separate the repair material at the defect, the wafer (100) in order to repair, wherein a dimension of the deposited repair material, less than about 32 nanometers; and- Removal of the repaired in accordance with (100) of the repair chamber (400); wherein the repair material of the first gas (404) a containing chromium material and the second gas is a oxidativgas.