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Semiconductor device having a switching element that suppresses a potential fluctuation

机译:具有抑制电位波动的开关元件的半导体装置

摘要

The semiconductor device (11, 111, 211) is provided with a plurality of switching elements (14) connected in parallel with each other and a plurality of return elements (15) connected in parallel with the aforementioned plurality of switching elements. An emitter electrode (14b) serves as a reference potential of the aforementioned plurality of switching elements, and an anode electrode (15b) serves as a reference potential of the aforementioned plurality of return elements electrically through the same plate-like member (17) made of a conductive material are connected. The above-mentioned switching elements and the above-mentioned return elements connected in parallel on the lowest potential side are configured such that the distance from the emitter terminal (11n) connected to the above-mentioned emitter electrode to the above-mentioned return element does not become larger is considered to be the distance from the above-mentioned emitter terminal.
机译:半导体装置(11、111、211)具有彼此并联连接的多个开关元件(14)和与上述多个开关元件并联连接的多个返回元件(15)。发射极(14b)用作上述多个开关元件的参考电位,并且阳极(15b)通过相同的板状构件(17)电用作上述多个返回元件的参考电位。连接导电材料。在最低电位侧并联连接的上述开关元件和上述返回元件被配置为使得从连接到上述发射极的发射极端子(11n)到上述返回元件的距离为未变大被认为是距上述发射极端子的距离。

著录项

  • 公开/公告号DE102017117708A1

    专利类型

  • 公开/公告日2018-02-08

    原文格式PDF

  • 申请/专利权人 DENSO CORPORATION;

    申请/专利号DE201710117708

  • 发明设计人 YUU YAMAHIRA;TETSUYA MATSUOKA;

    申请日2017-08-04

  • 分类号H01L25/07;

  • 国家 DE

  • 入库时间 2022-08-21 12:34:08

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