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A surface acoustic wave device and method of manufacture, which associates

机译:一种表面声波装置及其制造方法

摘要

A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.
机译:表面声波装置的制造方法包括以下步骤:提供包括布置在主正面上的换能器的压电基板的步骤;在压电基片的主正面和换能器上沉积电介质封装层的步骤;组装电介质封装层和支撑基板的主表面的步骤,该支撑基板的热膨胀系数小于压电基板的热膨胀系数。在另外的实施例中,声表面波装置包括压电材料层,该压电材料层在主正面上配备有换能器,该换能器布置在基板支架上,该基板支架的热膨胀系数小于压电材料的热膨胀系数。换能器布置在压电材料层和支撑衬底之间的电介质封装层中。

著录项

  • 公开/公告号FR3042648B1

    专利类型

  • 公开/公告日2018-09-07

    原文格式PDF

  • 申请/专利权人 SOITEC;

    申请/专利号FR20150059992

  • 发明设计人 PASCAL GUENARD;IONUT RADU;

    申请日2015-10-20

  • 分类号H01L41/22;H01L41/08;H03H9/00;

  • 国家 FR

  • 入库时间 2022-08-21 12:33:12

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