首页> 外国专利> FABRICATION TECHNIQUES TO ENHANCE PRESSURE UNIFORMITY IN ANODICALLY BONDED VAPOR CELLS AND CORRESPONDING WAFER STRUCTURE

FABRICATION TECHNIQUES TO ENHANCE PRESSURE UNIFORMITY IN ANODICALLY BONDED VAPOR CELLS AND CORRESPONDING WAFER STRUCTURE

机译:增强阳极结合的蒸汽电池和相应晶片结构中压力均匀性的制造技术

摘要

A method of fabricating one or more vapor cells comprises forming one or more vapor cell dies in a first wafer having a first diameter, and anodically bonding a second wafer to a first side of the first wafer over the vapor cell dies, the second wafer having a second diameter. A third wafer is positioned over the vapor cell dies on a second side of the first wafer opposite from the second wafer, with the third wafer having a third diameter. A sacrificial wafer is placed over the third wafer, with the sacrificial wafer having a diameter that is larger than the first, second and third diameters. A metallized bond plate is located over the sacrificial wafer. The third wafer is anodically bonded to the second side of the first wafer when a voltage is applied to the metallized bond plate while the sacrificial wafer is in place.
机译:一种制造一个或多个蒸气室的方法,包括在具有第一直径的第一晶片中形成一个或多个蒸气室管芯,以及将第二晶片阳极键合到蒸气室管芯上方的第一晶片的第一侧,该第二晶片具有第二个直径。第三晶片位于第一晶片的与第二晶片相反的第二侧上的蒸气室管芯上方,第三晶片具有第三直径。将牺牲晶片放置在第三晶片上方,其中牺牲晶片的直径大于第一,第二和第三直径。金属化的结合板位于牺牲晶片上方。当在牺牲晶片就位的同时将电压施加到金属化结合板上时,将第三晶片阳极键合到第一晶片的第二面上。

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