首页> 美国政府科技报告 >Double-Etching Technique for the Fabrication of Submicron Channels on a GaAs Wafer and Its Application to Laser Fabrication

【24h】

Double-Etching Technique for the Fabrication of Submicron Channels on a GaAs Wafer and Its Application to Laser Fabrication

机译：Gaas晶圆制备亚微米沟道的双蚀刻技术及其在激光制备中的应用

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Chen, C. Y.; Wang, S.;
展开▼
作者单位

展开▼
年度 1979
页码 p.1-9
总页数 9
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Fabrication; Integrated circuits; Etching; Channels; Gallium arsenides; Photolithography; Reprints;

机译：制造;集成电路;蚀刻;沟道;砷化镓;光刻;重印;

相似文献

外文文献
中文文献
专利

1. Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers [J] . D. Cengher, Z. Hatzopoulos, S. Gallis, Journal of Crystal Growth . 2003,第1a4期

机译：使用MBE生长的GaAs晶片与Si晶片的低温键合在Si上制造GaAs激光二极管
2. Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/lnP lasers on GaAs [J] . Ohiso Y., Iga R. Electronics Letters . 1999,第22期

机译：GaAs掩埋异质结构InGaAsP / InP激光器的薄膜晶圆融合制造技术
3. Dry etching of deep air holes in GaAs/AIGaAs-based epi-wafer having InAs quantum dots for fabrication of photonic crystal laser [J] . Zhang Xiuyu, Takeuchi Kento, Cong Xiaolong, Japanese journal of applied physics . 2017,第12期

机译：干法刻蚀具有InAs量子点的GaAs / AIGaAs基外延晶片中的深孔，用于制造光子晶体激光器
4. Fabrication of GaAs laser diodes on Si using low temperature bonding of MBE grown GaAs wafers with Si wafers [C] . Cengher, D., Hatzopoulos, . 2002

机译：使用MBE生长的GaAs晶片与Si晶片的低温键合在Si上制造GaAs激光二极管
5. Fabrication of high power aluminum: Free 0.8 micron to 1.0 micron InGaAsP/InGaP/GaAs lasers for optical pumping [D] . Diaz, Jacqueline Estela 1997

机译：高功率铝的制造：用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
6. Wafer-scale fabrication of high-aspect ratio nanochannels based on edge-lithography technique [O] . Quan Xie, Qing Zhou, Fei Xie, 2012

机译：基于边缘光刻技术的高纵横比纳米通道的晶圆级制备
7. Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers [O] . D. Cenghera, Z. Hatzopoulosa, S. Gallisa, 2015

机译：使用mBE生长的Gaas晶片与si晶片的低温键合在si上制造Gaas激光二极管
8. Electron Beam Lithographic Fabrication of Ultra-Submicron Gate GaAs MESFETs [R] . Bernstein, G., Ferry, D. K. 1986

机译：超亚微米栅极Gaas mEsFET的电子束平版印刷

Double-Etching Technique for the Fabrication of Submicron Channels on a GaAs Wafer and Its Application to Laser Fabrication

摘要

著录项

相似文献

相关主题

期刊订阅