首页> 外国专利> PROCESS FOR PRODUCING A THIN LAYER OF POROUS DLC, USE OF A PECVD PLANT AND WORKPIECE COATED WITH POROUS DLC

PROCESS FOR PRODUCING A THIN LAYER OF POROUS DLC, USE OF A PECVD PLANT AND WORKPIECE COATED WITH POROUS DLC

机译:制备多孔DLC的薄层的方法,使用PECVD工厂和涂有多孔DLC的工件

摘要

The invention relates to a process for producing a thin layer (22) of porous DLC, to the use of a PECVD plant (2) and to a workpiece (16) having a surface (20) coated with a porous DLC layer (22). In a process for producing a thin DLC layer (22), a carbon-containing precursor gas is introduced into a recipient (4) for depositing a DLC layer on the surface (20) to be coated of a workpiece (16), wherein the DLC layer (22) is deposited at a working pressure of between 20 * 10-3 and 30 * 10-3 mbar and a BIAS voltage of between -250 V and -150 V. Subsequently, a gas for etching back is introduced into the recipient (4) and DLC existing on the surface (20) of the workpiece (16) is etched back at a working pressure of between 200 * 10-3 and 300 * 10-3 mbar and a BIAS voltage of between -430 V and -330 V. This process is repeated multiple times.
机译:本发明涉及一种用于制造多孔DLC的薄层(22)的方法,涉及一种PECVD设备(2)的用途以及一种具有被多孔DLC层(22)覆盖的表面(20)的工件(16)。 。在生产薄的DLC层(22)的过程中,将含碳的前体气体引入接收器(4)中,以在待涂覆的工件(16)的表面(20)上沉积DLC层,其中在20 * 10-3至30 * 10-3 mbar的工作压力和-250 V至-150 V的BIAS电压下沉积DLC层(22)。随后,将用于回蚀的气体引入在200 * 10-3和300 * 10-3 mbar之间的工作压力以及-430 V和-430 V之间的BIAS电压下回蚀接收器(4)和工件(16)的表面(20)上存在的DLC。 -330V。此过程重复多次。

著录项

  • 公开/公告号EP3402910B1

    专利类型

  • 公开/公告日2019-10-23

    原文格式PDF

  • 申请/专利权人 HOCHSCHULE WISMAR;

    申请/专利号EP20170708976

  • 发明设计人 WIENECKE MARION;SCHÜTZ ANTJE;HEEG JAN;

    申请日2017-01-13

  • 分类号A61L31/08;C23C16/505;C23C16/02;C23C16/26;A61L31/14;C23C16/56;

  • 国家 EP

  • 入库时间 2022-08-21 12:30:01

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