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INHERENTLY SELECTIVE PRECURSORS FOR DEPOSITION OF SECOND OR THIRD ROW TRANSITION METAL THIN FILMS
INHERENTLY SELECTIVE PRECURSORS FOR DEPOSITION OF SECOND OR THIRD ROW TRANSITION METAL THIN FILMS
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机译:用于沉积第二行或第三行过渡金属薄膜的固有选择性前兆
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摘要
Inherently selective precursors for deposition of second or third row transition metal (e.g., tungsten or ruthenium) thin films are described. In an example, a ligand framework for second or third row transition metal complex formation includes a lithium complex.
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