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BOOTSTRAP CLASS-D WIDEBAND RF POWER AMPLIFIER

机译:自举D级宽带射频功率放大器

摘要

A high-power, high-frequency radio frequency power amplifier includes an output stage and a single-phase driver. The output stage is arranged in a Class-D amplifier configuration and includes a first depletion mode field effect transistor (FET), a second depletion mode FET, and a bootstrap path that couples the output of the output stage to the gate of the second FET. The first and second depletion mode FETs are switched out-of-phase and between fully-ON and fully-OFF states, under the direction of the single-phase driver. The single-phase driver directly controls the ON/OFF state of the first depletion mode FET and provides a discharge path through which the input gate capacitor of the second depletion mode FET in the output stage can discharge to turn OFF the second depletion mode FET. The bootstrap path provides a current path through which the input gate capacitor of the second depletion mode FET can charge to turn the second depletion mode FET ON.
机译:高功率高频射频功率放大器包括输出级和单相驱动器。输出级以D类放大器配置排列,并包括第一耗尽型场效应晶体管(FET),第二耗尽型FET和自举路径,该路径将输出级的输出耦合到第二FET的栅极。在单相驱动器的指导下,第一耗尽型FET和第二耗尽型FET异相切换,并在完全导通和完全截止状态之间切换。单相驱动器直接控制第一耗尽型FET的ON / OFF状态,并提供放电路径,通过该放电路径,输出级中的第二耗尽型FET的输入栅极电容器可以放电以截止第二耗尽型FET。自举路径提供了电流路径,第二耗尽型FET的输入栅极电容器可以通过该电流路径充电,以将第二耗尽型FET导通。

著录项

  • 公开/公告号EP3314758A4

    专利类型

  • 公开/公告日2019-01-30

    原文格式PDF

  • 申请/专利权人 ERIDAN COMMUNICATIONS INC.;

    申请/专利号EP20160818378

  • 发明设计人 DIDUCK QUENTIN;

    申请日2016-04-20

  • 分类号H03F3/193;H03F3/189;H03F3/217;H03K17/687;H03F1/02;H03F1/42;

  • 国家 EP

  • 入库时间 2022-08-21 12:27:47

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