MAGNETIC TUNNEL JUNCTION WITH PERPENDICULAR ANISOTROPY AND MINIMISED VARIABILITY, MEMORY POINT AND LOGIC ELEMENT COMPRISING THE MAGNETIC TUNNEL JUNCTION, METHOD FOR MANUFACTURING THE MAGNETIC TUNNEL JUNCTION

摘要

Magnetic tunnel junction with out-of-plane magnetization comprising: - A storage layer - A reference layer - A tunnel barrier layer The two magnetization states of the storage layer being separated by an energy barrier, said magnetic tunnel junction having a thermal stability factor depending on the energy barrier and the temperature of use of the magnetic tunnel junction, said magnetic tunnel junction being characterized in that: the storage layer has a thickness between 0.5 times and 8 times a characteristic dimension of a planar section of the tunnel junction - the composition and thickness of the storage layer are chosen so that the absolute value of the derivative of the thermal stability factor with respect to a characteristic dimension of a Planar section of the tunnel junction is less than 10nm. SOT type memory point including the magnetic tunnel junction ettique.Process of manufacturing the magnetic tunnel junction, the choice of the composition and the thickness of the storage layer based on optimal magnetization and thickness calculations.