MAGNETIC TUNNEL JUNCTION WITH ANISOTROPY OF PERPENDICULAR FORM AND VARIABILITY, MEMORY POINT AND LOGICAL ELEMENT COMPRISING THE MAGNETIC TUNNEL JUNCTION, METHOD OF MANUFACTURING THE MAGNETIC TUNNEL JUNCTION

摘要

A magnetic tunnel junction with out-of-plane magnetisation includes a storage layer; a reference layer; a tunnel barrier layer, the two magnetisation states of the storage layer being separated by an energy barrier, the magnetic tunnel junction having a thermal stability factor dependent on the energy barrier and on the temperature of use of the magnetic tunnel junction. The storage layer has a thickness comprised between 0.5 times and 8 times a characteristic dimension of a planar section of the tunnel junction; the composition and the thickness of the storage layer are chosen such that the absolute value of the derivative of the thermal stability factor compared to a characteristic dimension of a planar section of the tunnel junction is less than 10 nm^−1.