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DESIGNING AND FABRICATING SEMICONDUCTOR DEVICES WITH SPECIFIC TERRESTRIAL COSMIC RAY (TCR) RATINGS
DESIGNING AND FABRICATING SEMICONDUCTOR DEVICES WITH SPECIFIC TERRESTRIAL COSMIC RAY (TCR) RATINGS
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机译:使用特定的地面宇宙射线(TCR)额定值设计和制造半导体设备
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摘要
In one embodiment, a method of manufacturing a silicon-carbide (SiC) device includes receiving a selection of a specific terrestrial cosmic ray (TCR) rating at a specific applied voltage, determining a breakdown voltage for the SiC device based at least on the specific TCR rating at the specific applied voltage, determining drift layer design parameters based at least on the breakdown voltage. The drift layer design parameters include doping concentration and thickness of the drift layer. The method also includes fabricating the SiC device having a drift layer with the determined drift layer design parameters. The SiC device has the specific TCR rating at the specific applied voltage.
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