抵抗変化素子と半導体装置および製造方法

摘要

To provide a semiconductor device with resistance change element of metal deposition type, capable of suppressing a voltage required for switch operation and its variations.SOLUTION: The resistance change element includes: a resistance change film of metal deposition type; a first electrode for supplying metal ions to the resistance change film in contact with one surface of the resistance change film; a second electrode in contact with the other surface of the resistance change film.The first electrode has barrier metal at its outer periphery, and the barrier metal is in contact with the resistance change film through an insulator.SELECTED DRAWING: Figure 1