READ-OUT AMPLIFIER CIRCUIT, MEMORY DEVICE, METHOD FOR DETERMINING STATE VALUE OF RESISTANCE CHANGE TYPE MEMORY CELL, AND METHOD FOR OPERATING MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a read-out amplifier circuit for obtaining a state value of a resistance change type memory cell having a first resistance change type memory cell element by using a second resistance change type memory cell element.;SOLUTION: A control circuit in a read-out amplifier is configured to control a switch structure so as that: a voltage applied to a first resistance change type memory cell element is provided to a first memory element while a voltage applied to a second resistance change type memory cell element is provided to a second memory element in a first period; and a voltage applied to the first resistance change type memory cell is provided while a voltage applied to the second resistance change type memory cell element is provided in a second period. An evaluation circuit in the read-out amplifier circuit is configured to obtain a state value of the resistance change type memory cell by using the voltage supplied to the memory element in the first period and the voltage provided in the second period.;SELECTED DRAWING: Figure 11;COPYRIGHT: (C)2019,JPO&INPIT