IMPROVED TRANSISTOR DESIGN FOR USE IN ADVANCED NANOMETER FLASH MEMORY DEVICE

摘要

To provide an improved PMOS and NMOS transistor design technique of a sensing circuit for use in an advanced nanometer flash memory device.SOLUTION: In a decoder used for a memory device, a plurality of reception blocks 700 and 701 to 707 configured so as to receive from bit lines are each configured of two types of transistors having respectively different proximity effects and STI effects. Further, the two types of transistors are used in a sensing circuit in each of PMOS and NMOS transistors to improve performance of an analog circuit.SELECTED DRAWING: Figure 7