Determination of stack difference and correction using stack difference

摘要

The method is to obtain a measurement of a metrology target on a processed substrate using a patterning process, wherein the measurement is obtained using measurement radiation, and deriving from the measurement an object parameter of the patterning process Target parameters are corrected by the stack difference parameter, and the stack difference parameter is an intentional physical configuration between the metrology target on the adjacent periodic structure of the target or on the substrate and another adjacent target. Representing not a difference. [Selected figure] Figure 14A.