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Process, reactor and system for the fabrication of free-standing two-dimensional nanostructures using plasma technology

机译:使用等离子体技术制造独立二维纳米结构的方法,反应器和系统

摘要

The present invention relates to processes, reactors and systems for producing free-standing two-dimensional nanostructures using a microwave-excited plasma environment. This process is based on injecting a gas and precursor mixture (9) in a flow state into the reactor. This flow is exposed to an electric field of surface waves (5) excited by the use of microwave power (7) introduced into an electric field applicator (6) that generates a high energy density plasma (2, 3, 4). , Decomposing the precursor into its atomic and / or molecular components. The system includes a plasma reactor having a surface wave firing zone, a transient zone having a gradually increasing cross-sectional area, and a nucleation zone. The plasma reactor along with the infrared radiation source (11) provides a controlled adjustment of the temperature and gas flow velocity spatial gradients. The majority of the resulting two-dimensional nanostructure samples have a single atomic layer thickness, further allowing the process and system to obtain graphene production rates on the order of 1 gram / hour or more. [Selection] Figure 1
机译:本发明涉及使用微波激发等离子体环境生产独立二维纳米结构的方法,反应器和系统。该过程基于以流动状态将气体和前体混合物(9)注入反应器中。该流暴露于表面波(5)的电场,该表面波是通过使用引入电场施加器(6)的微波功率(7)激发的,该电场施加器产生高能量密度的等离子体(2、3、4)。 ,将前体分解成其原子和/或分子成分。该系统包括具有表面波激发区,具有逐渐增大的横截面积的瞬态区和成核区的等离子体反应器。等离子体反应器与红外辐射源(11)一起提供温度和气体流速空间梯度的受控调节。所得的大多数二维纳米结构样品均具有单个原子层厚度,从而进一步使该方法和系统获得的石墨烯生产速率约为1克/小时或更高。 [选择]图1

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