Presented herein are methods and systems for performing simultaneous spectroscopic measurements of semiconductor structures over a wide range of incident angles (AOI), azimuthal angles, or both. A spectrum including two or more sub-ranges of incident angle, azimuth angle, or both is measured simultaneously with high throughput across different sensor areas. The collected light is linearly distributed across different photosensitive areas of one or more detectors according to the wavelength of each subrange of AOI, azimuth, or both. Each different light sensitive area is placed on one or more detectors to perform a separate spectroscopic measurement for each different range of AOI, azimuth or both. Thus, a wide range of AOIs, azimuths or both are detected simultaneously with a high signal to noise ratio. This approach allows high throughput measurements with high aspect ratio structures with high throughput, high accuracy and high accuracy.
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