The method of the manufacturing method and manufacture solid-state imager of semiconductor epitaxial cormorant-III

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor epitaxial wafer having high gettering capability and capable of suppressing occurrence of an epitaxial defect.SOLUTION: A method for manufacturing a semiconductor epitaxial wafer 100 comprises: a first step of forming a modified layer 14 in which a constituent element of a cluster ion 12 is solidly solved in a surface part of a semiconductor wafer 10 by irradiating a surface 10A of the semiconductor wafer with the cluster ion; and a second step of forming an epitaxial layer 20 on the modified layer 14 of the semiconductor wafer. The first step adjusts irradiation conditions of the cluster ion on the basis of the relationship between a predetermined thermal wave signal intensity of the surface part and the number of epitaxial defects on a surface of the epitaxial layer.SELECTED DRAWING: Figure 1