首页> 外国专利> Substituted cyclopentadienyl cobalt complex and method for producing the same, cobalt-containing thin film and method for producing the same

Substituted cyclopentadienyl cobalt complex and method for producing the same, cobalt-containing thin film and method for producing the same

机译:取代的环戊二烯基钴络合物及其制备方法,含钴薄膜及其制备方法

摘要

PROBLEM TO BE SOLVED: To provide a cobalt complex useful for making a cobalt-containing thin film under the condition of using no oxidative gas.SOLUTION: The present invention provides a cyclopentadienyl cobalt complex represented by formula (1) (Ris a trialkyl silyloxy group; Ris H, a C1-6 alkyl group or a trialkyl silyloxy group; R-Rare H or a C1-6 alkyl group).SELECTED DRAWING: None
机译:解决的问题:提供一种在不使用氧化性气体的条件下可用于制造含钴薄膜的钴络合物。解决方案:本发明提供由式(1)表示的环戊二烯基钴络合物(R 3为三烷基甲硅烷氧基) ; Ris H,C 1-6烷基或三烷基甲硅烷基氧基; R-Rare H或C 1-6烷基)。

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