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Positive photosensitive siloxane composition, active matrix substrate, display device, and method of manufacturing active matrix substrate

机译:正型光敏硅氧烷组合物,有源矩阵基板,显示装置和制造有源矩阵基板的方法

摘要

The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate 30 includes a plurality of gate wirings 11 provided so as to extend parallel to each other on an insulating substrate 10, and a plurality of source wirings 12 provided so as to extend parallel to each other in a direction intersecting the respective gate wirings 11. An interlayer insulating film 14 and a gate insulating film 15 are interposed at portions including the intersecting portions of the gate wirings 11 and the source wirings 12, on a lower side of the source wiring 12. The interlayer insulating film 14 is formed using the positive type photosensitive siloxane composition without using a resist.
机译:本发明提供一种正型光敏硅氧烷组合物,其中由其形成的膜具有高耐热性,高强度和高抗裂性,其中不产生副产物,抑制了缺陷的发生的活性基质基板,本发明涉及一种具有有源矩阵基板的显示装置以及有源矩阵基板的制造方法,该液晶显示面板包括具有良好的透射率的低成本且容易形成的层间绝缘膜。有源矩阵基板30包括在绝缘基板10上相互平行延伸设置的多个栅极布线11,以及在与各个栅极交叉的方向上相互平行延伸设置的多个源极布线12。在源极布线12的下侧,在包括栅极布线11和源极布线12的相交部分的部分处插入层间绝缘膜14和栅极绝缘膜15。形成层间绝缘膜14使用正型光敏硅氧烷组合物而不使用抗蚀剂。

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