Active Matrix PHOLED Displays on Temporary Bonded Polyethylene Naphthalate Substrates with 180℃ a-Si:H TFTs

摘要

A low temperature, 180℃, amorphous Si (a-Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1-inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0:773 cm{sup}2/V-sec, layer to layer registration distortion less than 10ppm and low detectivity. The efficiency of the OLED display is 39 cd/A at 500 nits.