14.7' Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature IGZO TFTs

摘要

A flexible, 14.7 inch diagonal organic light emitting diode display has been successfully demonstrated. Device fabrication of the thin film transistor backplane occurred below 200℃ on a polyethylene naphthalate substrate using indium gallium zinc oxide with a saturation mobility of 13.5 cm~2/V-s as the active semiconductor.