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Resist pattern refinement composition and micropattern formation method

机译:抗蚀剂图案细化成分和微图案形成方法

摘要

A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; M+ represents a monovalent cation; and R3 represents a monovalent organic group having 1 to 30 carbon atoms.
机译:用于抗蚀剂图案细化的组合物包括由式(1-1)表示的离子,由式(1-2)表示的离子,由式(2-1)表示的离子,由式(2-2表示)的离子。 )和溶剂。相对于溶剂以外的成分的合计,离子的合计量为50质量%以上。 R 1表示碳原子数1〜30的一价有机基团或氟原子。 Z代表单键或二价连接基团; R 2表示单键,碳数为1〜10的二价烃基或碳数为1〜10的二价氟化烃基。 M +代表一价阳离子; R 3表示碳数1〜30的一价有机基团。

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