首页> 外国专利> MSM TYPE ULTRAVIOLET LIGHT RECEIVING ELEMENT, AND MSM TYPE ULTRAVIOLET LIGHT RECEIVING DEVICE

MSM TYPE ULTRAVIOLET LIGHT RECEIVING ELEMENT, AND MSM TYPE ULTRAVIOLET LIGHT RECEIVING DEVICE

机译:MSM型紫外线接收元件和MSM型紫外线接收装置

摘要

To provide an MSM type ultraviolet light receiving element whose current value in a dark condition is extremely low, and that has good light reception sensitivity at incidence of light.SOLUTION: An MSM type ultraviolet light receiving element 1 comprises: a substrate 2; a first nitride semiconductor layer 3 formed on the substrate; a second nitride semiconductor layer 4 formed on the first nitride semiconductor layer; and a first electrode 5 and a second electrode 6 formed on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlGaN (0.45≤X≤0.90). The second nitride semiconductor layer contains AlGaN. A film thickness t (nm) satisfies 5≤t≤25. The first electrode and the second electrode contain a material containing at least three of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr and Zr. Al composition ratios X and Y and the film thickness t satisfy -0.009×t+X+0.22-0.03≤Y≤-0.009×t+X+0.22+0.03.SELECTED DRAWING: Figure 1
机译:提供一种MSM型紫外光接收元件,其在黑暗条件下的电流值极低,并且在光入射时具有良好的光接收灵敏度。在衬底上形成的第一氮化物半导体层3;在第一氮化物半导体层上形成的第二氮化物半导体层4。第一电极5和第二电极6形成在第二氮化物半导体层上。第一氮化物半导体层包含AlGaN(0.45≤X≤0.90)。第二氮化物半导体层包含AlGaN。膜厚度t(nm)满足5≤t≤25。第一电极和第二电极包含包含钛,铝,金,镍,钒,钼、,、钽,钨,铌,锌,银,铬和锆中的至少三种的材料。铝成分比X和Y以及膜厚t满足-0.009×t + X +0.22-0.03≤Y≤-0.009×t + X + 0.22 + 0.03。图1

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号