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For the about growing germanium crystal of geometry of resolving

机译:用于解析几何形状的约成长锗晶体

摘要

PROBLEM TO BE SOLVED: To provide a method for making determination about the geometry of Ge crystal growth, i.e. whether the Ge growth is two-dimensional layer growth or three-dimensional island-like growth in an initial stage of the Ge crystal growth.SOLUTION: A method for making determination about the geometry of Ge crystal growth comprises the steps of: measuring the polarization of incident light applied to a Ge surface on SiOand reflection light reflected off the Ge surface by a spectroscopic ellipsometer 100 which measures the ellipsometry while changing the wavelength of a light source 1; observing a trajectory on a ψ-Δ plane defined from the change in polarization (ψ represents an amplitude ratio of p-polarization/s-polarization, and Δ represents a phase difference between p-polarization and s-polarization); and making determination from a spiral shape of the trajectory about whether the Ge growth is two-dimensional layer growth or three-dimensional island-like growth in an initial stage of Ge crystal growth.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种确定Ge晶体生长几何形状的方法,即在Ge晶体生长的初始阶段,Ge生长是二维层生长还是三维岛状生长。 :用于确定Ge晶体生长的几何形状的方法包括以下步骤:通过光谱椭圆仪100测量在SiO上Ge表面上入射的入射光的偏振和从Ge表面反射的反射光,该椭圆仪测量椭圆率,同时改变椭圆率。光源1的波长;观察由极化变化定义的ψ-Δ平面上的轨迹(ψ表示p极化/ s极化的振幅比,Δ表示p极化与s极化之间的相位差);并根据轨迹的螺旋形状确定在Ge晶体生长的初始阶段,Ge的生长是二维层生长还是三维岛状生长。图1

著录项

  • 公开/公告号JP6467359B2

    专利类型

  • 公开/公告日2019-02-13

    原文格式PDF

  • 申请/专利权人 日本電信電話株式会社;

    申请/专利号JP20160020031

  • 发明设计人 赤澤 方省;

    申请日2016-02-04

  • 分类号H01L21/66;H01L21/205;C30B29/08;C30B25/02;C23C16/52;G01N21/21;

  • 国家 JP

  • 入库时间 2022-08-21 12:19:03

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