PROBLEM TO BE SOLVED: To provide a method for making determination about the geometry of Ge crystal growth, i.e. whether the Ge growth is two-dimensional layer growth or three-dimensional island-like growth in an initial stage of the Ge crystal growth.SOLUTION: A method for making determination about the geometry of Ge crystal growth comprises the steps of: measuring the polarization of incident light applied to a Ge surface on SiOand reflection light reflected off the Ge surface by a spectroscopic ellipsometer 100 which measures the ellipsometry while changing the wavelength of a light source 1; observing a trajectory on a ψ-Δ plane defined from the change in polarization (ψ represents an amplitude ratio of p-polarization/s-polarization, and Δ represents a phase difference between p-polarization and s-polarization); and making determination from a spiral shape of the trajectory about whether the Ge growth is two-dimensional layer growth or three-dimensional island-like growth in an initial stage of Ge crystal growth.SELECTED DRAWING: Figure 1
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