Method for manufacturing silicon germanium epitaxial chip and silicon germanium epitaxial chip

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon germanium epitaxial wafer capable of reducing density of threading dislocation and a silicon germanium epitaxial wafer obtainable by the method.SOLUTION: A method for manufacturing a silicon germanium epitaxial wafer includes: a first step S10 of forming a buffer layer implanted with first ions on a surface of a silicon wafer: a second step S20 of forming one or more epitaxial layers implanted with second ions on the buffer layer; and a third step S30 of forming a silicon germanium epitaxial layer on the uppermost layer of the epitaxial layer.SELECTED DRAWING: Figure 1