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With the III-nitride application mode transistor that can adjust the voltage that fixes with high gate source
With the III-nitride application mode transistor that can adjust the voltage that fixes with high gate source
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机译:借助III型氮化物应用模式晶体管,可以调节固定在高栅极源极上的电压
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摘要
A semiconductor device includes an enhancement mode GaN FET with a depletion mode GaN FET electrically coupled in series between a gate node of the enhancement mode GaN FET and a gate terminal of the semiconductor device. A gate node of the depletion mode GaN FET is electrically coupled to a source node of the enhancement mode GaN FET. A source node of said enhancement mode GaN FET is electrically coupled to a source terminal of the semiconductor device, a drain node of the enhancement mode GaN FET is electrically coupled to a drain terminal of said semiconductor device, and a drain node of the depletion mode GaN FET is electrically coupled to a gate terminal of the semiconductor device.
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