首页> 外国专利> Differential sensing circuit with dynamic voltage reference for single-ended bit line memory

Differential sensing circuit with dynamic voltage reference for single-ended bit line memory

机译:具有动态电压基准的差分检测电路,用于单端位线存储器

摘要

The present invention provides a differential sensing circuit with a dynamic voltage reference for a single-ended bit line memory is disclosed. The exemplary differential sensing circuit comprises: a dynamic voltage reference generating unit and a differential sensing amplifying unit. The dynamic voltage reference generating unit is coupled to an input voltage, and utilized for receiving a setting signal to generate the dynamic voltage reference. The differential sensing amplifying unit is coupled to the single-ended bit line memory and the dynamic voltage reference generating unit, and utilized for receiving at least an input signal from the single-ended bit line memory and the dynamic voltage reference from the dynamic voltage reference generating unit, so as to generate at least an output signal accordingly.
机译:本发明提供了一种用于单端位线存储器的具有动态电压基准的差分感测电路。该示例性差分感测电路包括:动态电压基准产生单元和差分感测放大单元。动态参考电压产生单元耦接输入电压,并用以接收设定信号以产生动态参考电压。差分感测放大单元耦合到单端位线存储器和动态电压基准产生单元,并用于至少接收来自单端位线存储器的输入信号和来自动态电压基准的动态电压基准。产生单元,以便相应地产生至少一个输出信号。

著录项

  • 公开/公告号US10325634B2

    专利类型

  • 公开/公告日2019-06-18

    原文格式PDF

  • 申请/专利权人 MEDIATEK INC.;

    申请/专利号US201715441480

  • 发明设计人 SHIH-HUANG HUANG;REI-FU HUANG;

    申请日2017-02-24

  • 分类号G11C7/12;G11C7/14;G11C7/08;G11C7/22;G11C7/06;

  • 国家 US

  • 入库时间 2022-08-21 12:16:16

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