首页> 外国专利> Bi-directional Zener diode having a first and second impurity regions groups formed in surface portion of a substrate and a first electrode electrically connected to at least one first impurity regions, and not connected from at least another one

Bi-directional Zener diode having a first and second impurity regions groups formed in surface portion of a substrate and a first electrode electrically connected to at least one first impurity regions, and not connected from at least another one

机译:双向齐纳二极管,其具有在基板的表面部分中形成的第一杂质区域组和第二杂质区域组以及电连接至至少一个第一杂质区域并且不与至少另一个杂质区域连接的第一电极

摘要

A bidirectional Zener diode includes a substrate. A first conductivity type base region is formed in a surficial portion of the substrate. A second conductivity type first impurity region is formed in a surficial portion of the base region so as to form a pn junction with the base region. A second conductivity type second impurity region is formed in a surficial portion of the base region in a manner spaced apart from the first impurity region so as to form a pn junction with the base region. A first electrode is arranged at the surface of the substrate. A second electrode is arranged at the surface of the substrate. A dimension of the base region along the surface of the substrate between the first impurity region and the second impurity region is equal to or greater than 4.0 μm and equal to or smaller than 12.5 μm.
机译:双向齐纳二极管包括衬底。在基板的表面部分中形成第一导电类型的基极区。在基极区域的表面部分中形成第二导电类型的第一杂质区域,以便与基极区域形成pn结。第二导电类型的第二杂质区域以与第一杂质区域间隔开的方式形成在基极区域的表面部分中,从而与基极区域形成pn结。第一电极布置在基板的表面处。第二电极布置在基板的表面处。在第一杂质区域和第二杂质区域之间沿着基底的表面的基极区域的尺寸等于或大于4.0μm并且等于或小于12.5μm。

著录项

  • 公开/公告号US10431697B2

    专利类型

  • 公开/公告日2019-10-01

    原文格式PDF

  • 申请/专利权人 ROHM CO. LTD.;

    申请/专利号US201615273380

  • 发明设计人 HIROKI YAMAMOTO;

    申请日2016-09-22

  • 分类号H01L29/866;H01L29/66;H01L29/417;H01L21/225;

  • 国家 US

  • 入库时间 2022-08-21 12:15:43

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