Diode used as a pn-barrier layer diode comprises a semiconductor substrate, strip diffusion regions, first electrodes connected to the diffusion regions, and a second electrode

摘要

Diode comprises a semiconductor substrate (1) of a first or second conductivity, first and second strip diffusion regions (2, 3), first electrodes (7a, 7b) which are removed from the semiconductor substrate and connected to the diffusion regions, and a second electrode (7b') which covers the ends of the diffusion regions next to an insulating layer (5). Independent claims are also included for the following: (1) Alternative diodes; and (2) Process for the production of the diode