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Methods of doping semiconductor materials and metastable doped semiconductor materials produced thereby

机译:掺杂半导体材料的方法以及由此生产的亚稳态掺杂半导体材料

摘要

The structures of base semiconductor materials such as Si are modified by the use of isotope transmutation alloying. A radioisotope such as Si31 is added into a base semiconductor material such as Si, and the radioisotope is transformed to a transmuted form within the crystal lattice structure of the base semiconductor material. A master alloy comprising a relatively large amount of radioisotope such as Si31 may initially be made, followed by introduction of the master alloy into the base semiconductor material. When Si31 is used as the radioisotope, it may be transmuted into P31 within an Si crystal lattice structure. Metastable semiconductor materials doped with otherwise insoluble amounts of selected dopants are produced as a result of the transmutation process.
机译:诸如Si之类的基础半导体材料的结构可通过使用同位素alloy变合金进行修饰。将诸如Si 31 之类的放射性同位素添加到诸如Si之类的基础半导体材料中,并且该放射性同位素在基础半导体材料的晶格结构内转变为a变形式。可以首先制造包含相对大量的放射性同位素(例如Si 31 )的中间合金,然后将中间合金引入基础半导体材料中。当Si 31 用作放射性同位素时,它可以在Si晶格结构内转变为P 31 。 the变过程产生了掺杂有否则不溶量的所选掺杂剂的亚稳半导体材料。

著录项

  • 公开/公告号US10290752B1

    专利类型

  • 公开/公告日2019-05-14

    原文格式PDF

  • 申请/专利权人 ST3 LLC;

    申请/专利号US201715586943

  • 申请日2017-05-04

  • 分类号H01L31/0288;H01L31/18;H01L21/261;C30B31/20;G21H1/02;

  • 国家 US

  • 入库时间 2022-08-21 12:15:40

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