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Memory device with unipolar resistive memory cells with programmable resistive element end control transistor and set/reset operations of thereof
Memory device with unipolar resistive memory cells with programmable resistive element end control transistor and set/reset operations of thereof
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机译:具有具有可编程电阻元件端控制晶体管的单极电阻存储单元的存储装置及其置位/复位操作
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摘要
A memory circuit including cells connected in rows and in columns, each cell including a programmable resistive element and a control transistor, the memory circuit further including a control circuit capable of, during a cell programming phase: applying a first voltage to a control conductive track of the column including the cell; applying a second voltage to the first control conductive track of the row including the cell; applying a third voltage capable of turning on the cell control transistor to a second row control conductive track including the cell; and applying a fourth voltage capable of turning off the control transistors to the control conductive tracks of columns which do not include the cell.
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