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Level shifter circuit with transistor drive strength variation compensation

机译:具有晶体管驱动强度变化补偿的电平转换器电路

摘要

A level shifter circuit is described herein for shifting a signal from a first voltage domain to a second voltage domain. The level shifter circuit includes two current paths between a supply terminal of the first voltage domain and a supply terminal of the second voltage domain. The first and second current paths each include a differential transistor that receives a signal from a pulse generator in a first voltage domain. The pulse generator provides pulses to the differential transistors based on an input signal to be translated to the second voltage domain. The level shifter includes a latch circuit in the second voltage domain that includes two inputs where each input is biased at a node of one of the current paths. Each current path includes a bias transistor whose control terminal receives a compensated biasing voltage for biasing the bias transistor. The compensated biasing voltage is compensated to account for drive strength variation of at least one transistor in each current path.
机译:这里描述了电平移位器电路,用于将信号从第一电压域移位到第二电压域。电平转换器电路包括在第一电压域的供应端子和第二电压域的供应端子之间的两个电流路径。第一和第二电流路径均包括差分晶体管,该差分晶体管从第一电压域中的脉冲发生器接收信号。脉冲发生器基于要转换为第二电压域的输入信号向差分晶体管提供脉冲。电平移位器包括在第二电压域中的锁存电路,该锁存电路包括两个输入,其中每个输入在电流路径之一的节点处被偏置。每个电流路径包括偏置晶体管,该偏置晶体管的控制端子接收用于偏置该偏置晶体管的补偿偏置电压。补偿的偏置电压被补偿以解决每个电流路径中至少一个晶体管的驱动强度变化。

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