Drive method of the level shift circuit and the level shift circuit, and the semiconductor circuit device which possesses the level shift circuit

摘要

(Summary) This invention is the level shift circuit where surplus electric current does not occur, the high electric potential power source which generates high electric potential and, low low we are connected with by electric potential which generates electric potential power source and the ground power source which generates ground electric potential, the description above low we receive the electric potential which amplitude is done signal low between electric potential and ground electric potential, we convert to the high electric potential signal which amplitude is done between the aforementioned high electric potential and the aforementioned ground electric potential and the aforementioned invertor section we are in series connected between the invertor section and the aforementioned high electric potential power source and the aforementioned ground power source which it reverses expands the aforementioned high electric potential signal from the level shift section and the aforementioned level shift section which are output,It features that it has the N type MOS transistor where, the description above electric potential power source is connected to the gate electrode low, supplies the aforementioned ground electric potential to the aforementioned invertor section and. In addition, when the above-mentioned level circuit is used, not to relate to the throwing order of analog power source and logic power source, the semiconductor circuit device which does not have the occurrence of surplus electric current can be offered.(Selective figure) Figure 1