LEVEL SHIFT CIRCUIT, LEVEL SHIFT CIRCUIT DRIVING METHOD, AND SEMICONDUCTOR CIRCUIT APPARATUS HAVING LEVEL SHIFT CIRCUIT

摘要

The present invention is a low-potential power source, is connected to the ground power source for generating a ground potential, said lower potential above ground to generate a high potential power supply and a low potential for generating an upper and a level shift circuit is the excess current does not occur, classic receiving a low potential signal that oscillates between a potential, the classical above and the level shift section which converts into a high potential signal that oscillates between the ground potential, the inverter unit for inverting amplifying the high potential signal from the level shift unit and, the classical connected in series with the inverter section between the power-source and the ground power supply, wherein in that the potential power source is connected to the gate electrode, that having N-type MOS transistor for supplying the ground potential to the inverter unit It characterized. In addition, the use of the aforementioned circuit-level, regardless of the input order of the analog power and logic power supply, it is possible to provide a semiconductor circuit device without the occurrence of the excess current.