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Amorphous hydrogenated boron carbide low-k dielectric and method of making the same
Amorphous hydrogenated boron carbide low-k dielectric and method of making the same
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机译:非晶氢化碳化硼低k电介质及其制备方法
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摘要
A method of forming a low-dielectric-constant amorphous hydrogenated boron carbide film on a substrate includes positioning the substrate within a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a boron carbide precursor and introducing the boron carbide precursor into a carrier gas to form a carrier gas-precursor mixture. The method also includes introducing the carrier gas-precursor mixture into the PECVD chamber. The method also includes applying radio frequency power within the PECVD chamber to the carrier gas-precursor mixture to form one or more plasmas containing one or more species containing at least one of boron, carbon or hydrogen. The method also includes forming the low-dielectric-constant amorphous hydrogenated boron carbide film on the substrate within the PECVD chamber.
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