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Nanoscale Structure-Property Relationship in Amorphous Hydrogenated Boron Carbide for Low-k Dielectric Applications

机译：低磷介质应用中无定形氢化硼碳化物中的纳米级结构性质关系

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Soohyun Im; Michelle M. Paquette; Mohammed Belhadj-Larbi; Paul Rulis; Ridwan Sakidja; Jinwoo Hwang;
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1. Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide [J] . Hadjadj A, Cabarrocas PRI, Equer B Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties . 1997,第6期

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3. Evidence for and role boron carbide icosahedra in the hardness of amorphous hydrogenated boron carbide [J] . Janet Braddock-Wilking, Shu-Han lin, Bernard J. Feldman Tribology letters . 1998,第2a3期

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4. STRUCTURE-PROPERTY RELATIONSHIPS IN POLYMER DERIVED AMORPHOUS/NANO-CRYSTALLINE SILICON CARBIDE FOR NUCLEAR APPLICATIONS [C] . Suraj C. Zunjarrao, Abhishek K. Singh, Raman P. Singh 14th International Conference on Nuclear Engineering 2006(ICONE14) vol.3 . 2006

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5. Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide. [D] . Peterson, George Glenn. 2017

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6. Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications [O] . Christopher E. Sunday, Karl R. Montgomery, Papa K. Amoah, -1

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8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

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Nanoscale Structure-Property Relationship in Amorphous Hydrogenated Boron Carbide for Low-k Dielectric Applications

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