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Gallium nitride (GaN) power amplifiers (PA) with angled electrodes and 100 CMOS and method for producing the same
Gallium nitride (GaN) power amplifiers (PA) with angled electrodes and 100 CMOS and method for producing the same
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机译:具有成角度的电极和100 CMOS的氮化镓(GaN)功率放大器(PA)及其制造方法
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摘要
A method of forming a CMOS device and a GaN PA structure on a 100 Si substrate having a surface orientated in 111 direction and the resulting device are provided. Embodiments include forming a device with a protective layer over a portion of a Si substrate; forming a V-shaped groove in the Si substrate; forming a buffer layer, a GaN layer, an AlGaN layer and a passivation layer sequentially over the Si substrate; forming trenches through the passivation and the AlGaN layers; forming second trenches through the passivation layer; forming electrode structures over portions of the passivation layer and filling the first and second trenches; removing portions of the passivation layer, the AlGaN layer and the GaN layer outside of the V-shaped groove down to the buffer layer; forming a dielectric layer over the Si substrate; and forming vias through the dielectric layer down to electrode structures and the device.
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