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Fabrication of microfluidic chips having electrodes level with microchannel walls

机译:具有与微通道壁齐平的电极的微流控芯片的制造

摘要

The present invention is notably directed to method of fabrication of a microfluidic chip (1), comprising: providing (S1-S7) a substrate (10), a face (F) of which is covered by an electrically insulating layer (30); obtaining (S8) a resist layer (40) covering one or more selected portions (P1) of the electrically insulating layer (30), at least a remaining portion (P2) of said electrically insulating layer (30) not being covered by the resist layer; partially etching (S9) with a wet etchant (E) a surface of the remaining portion (P2) of the electrically insulating layer (30) to create a recess (40r) and/or an undercut (40u) under the resist layer (40); depositing (S10) the electrically conductive layer (50) on the etched surface (35), such that the electrically conductive layer reaches the created recess (40r) and/or undercut (40u); and removing (S11) the resist layer (40) to expose a portion (P1) of the electrically insulating layer adjoining a contiguous portion (P2) of the electrically conductive layer (50). The present invention is further directed to microfluidic chips obtainable by such methods.
机译:本发明尤其涉及微流体芯片( 1 )的制造方法,其包括:提供(S 1 -S 7 )a基板( 10 ),其表面(F)被电绝缘层( 30 )覆盖;获得(S 8 )覆盖电绝缘层(的一个或多个选定部分(P 1 )的抗蚀剂层( 40 ) > 30 ),所述电绝缘层( 30 )的至少其余部分(P 2 )未被抗蚀剂层覆盖;用湿蚀刻剂(E)对电绝缘层( 30 的其余部分(P 2 )的表面进行部分蚀刻(S 9 ) >)在抗蚀剂下创建凹槽( 40 r )和/或底切( 40 u )层( 40 );在蚀刻的表面( 35 )上沉积(S 10 )导电层( 50 ),以使导电层到达所创建的凹进( 40 r )和/或底切( 40 u );去除(S 11 )抗蚀剂层( 40 ),以暴露电绝缘层中邻接部分的部分(P 1 )导电层( 50 )的(P 2 )。本发明进一步涉及通过这种方法可获得的微流体芯片。

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